Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/16896
Title: Dislocation density and strain distribution in SrTiO3 film grown on (110) DyScO3 substrate
Authors: Zhai, ZY
Wu, XS
Cai, HL
Lu, XM
Hao, JH 
Gao, J
Tan, WS
Jia, QJ
Wang, HH
Wang, YZ
Issue Date: 2009
Publisher: Iop Publishing Ltd
Source: Journal of physics d - applied physics, 2009, v. 42, no. 10, e5415 How to cite?
Journal: Journal of Physics D-Applied Physics 
Abstract: High quality SrTiO3 thin film on (1 1 0) DyScO3 substrate is grown by laser molecular beam epitaxy. The lattice strain resulting from the lattice mismatch between the substrate and the film relaxes gradually with depth. A critical thickness of about 30 nm for sharp strain relaxation is observed. The dislocation density, which forms to relax the lattice strain, is estimated to be about 10(8) cm(-2) according to the high resolution x-ray diffraction. The edge dislocation density is slightly larger than that of the screw ones.
URI: http://hdl.handle.net/10397/16896
ISSN: 0022-3727
DOI: 10.1088/0022-3727/42/10/105307
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