Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/16879
Title: Thermomigration and electromigration in Sn8Zn3Bi solder joints
Authors: Gu, X
Yung, KC 
Chan, YC
Yang, D
Issue Date: 2011
Publisher: Springer
Source: Journal of materials science : materials in electronics, 2011, v. 22, no. 3, p. 217-222 How to cite?
Journal: Journal of materials science : materials in electronics 
Abstract: Individual effect of thermomigration (TM) and combined effect of TM and electromigration (EM) on the microstructural variation in Sn8Zn3Bi was investigated by stressing line-type Au/Ni-P/Cu-Sn8Zn3Bi-Au/Ni-P/Ni solder joints with a 5 × 10 3A/cm 2 alternating current (AC) or direct current (DC) at 110°C. Due to the different thermoelectric characteristics of Cu and Ni wires, a thermal gradient of 196°C/cm could be established across the solder joints according to the finite element simulation. In AC current stressing, there is no EM effect and only TM dominates the migration. Microstructural study shows that Zn atoms migrate towards the lower temperature side during TM. In DC current stressing, it is found that both EM and TM play important roles depending various experimental conditions. And the energy change during the EM and the TM is estimated to be δω em 3.2 × 10 -28 Joule and δω em 2.2 × 10 -28 Joule, respectively. Upon different current directions in DC current stressing, there is a counteractive or accelerated effect between TM and EM on Zn migration, resulting different microstructures at the cathode side in the solder joints.
URI: http://hdl.handle.net/10397/16879
ISSN: 0957-4522
EISSN: 1573-482X
DOI: 10.1007/s10854-010-0116-9
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