Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/16870
Title: Enhanced redshift of the optical band gap in Sn-doped ZnO free standing films using the sol-gel method
Authors: Yung, KC 
Liem, H
Choy, HS
Issue Date: 2009
Publisher: Institute of Physics Publishing
Source: Journal of physics. D, Applied physics, 2009, v. 42, no. 18, 185002 How to cite?
Journal: Journal of physics. D, Applied physics 
Abstract: The optical band gap in free standing transparent zinc oxide (ZnO) films using the sol-gel method was studied. The effect of Sn doping on grain size, vibrational structure and on the optical properties of ZnO films was investigated. Contrary to the common observation, the optical band gap of Sn-doped ZnO is red-shifted from 3.38 to 3.18 eV as the doping weight percentage is increased to 3%. The redshift of the optical band gap is due to the deep states in the band gap, and a change of ∼0.2 eV can only be observed when a substrate is not used. This study illustrates that removal of interaction between film boundaries and substrate is essential for developing effective band gap-tunable ZnO thin films.
URI: http://hdl.handle.net/10397/16870
ISSN: 0022-3727
EISSN: 1361-6463
DOI: 10.1088/0022-3727/42/18/185002
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