Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/16523
Title: Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells
Authors: Chen, G
Choi, AHW
Lai, PT
Tang, WM 
Issue Date: 2014
Publisher: American Institute of Physics published on behalf of the American Vaccum Society
Source: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2014, v. 32, no. 1, 11212 How to cite?
Journal: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena 
Abstract: A Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells was fabricated. Its hydrogen-sensing properties (e.g., current-voltage characteristics, barrier-height variation, and response) and its hydrogen adsorption properties (e.g., hydrogen reaction kinetics, transient behavior, response time, and activation energy) were studied over a wide range of temperature or H2 concentration. Results showed that the device is sensitive to hydrogen ambient even at high temperature (response is 0.11 at 300 C in 810 ppm H2). According to the kinetic adsorption analysis, the activation energy of the sensor is 4.9 kcal/mol. Moreover, the sensor could perform rapid hydrogen detection at high temperature (response time is 25.1 s at 400 C in 800 ppm H2). Therefore, the sensor is a useful device for hydrogen-sensing applications, especially at high temperature.
URI: http://hdl.handle.net/10397/16523
ISSN: 1071-1023
DOI: 10.1116/1.4855057
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