Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/1632
Title: The parameters identification and validation for IGBT based on optimization algorithm
Authors: Gao, Y
Miao, Y
Guo, S
Wang, D
Keywords: Insulated gate bipolar transistors
Optimisation
Parameter estimation
Semiconductor device models
Issue Date: 2006
Publisher: Power Electronics Research Centre, The Hong Kong Polytechnic University
Source: 2006 2nd International Conference on Power Electronics Systems and Applications : Hong Kong, 12-14 November 2006, p. 91-95 How to cite?
Abstract: IGBT (Insulated Gate Bipolar Transistor) is becoming more and more popular in many power applications, since it offers a good compromise between on-state loss, switching loss and easy of use. To develop circuits and systems using theses devices, model and model parameters are needed for use in circuit simulations. This paper presents a procedure for identifying the most IGBT models parameters. As an example, the results of identified parameters of BUP302 are given. Based on the identification, the paper presents the method for parameters validation. At last, the conclusion was given.
URI: http://hdl.handle.net/10397/1632
ISBN: 9623675445
Rights: Copyright © The Hong Kong Polytechnic University 2006
Appears in Collections:Conference Paper

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