Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/16278
Title: Improved characteristics of InGaZnO thin-film transistor by using fluorine implant
Authors: Qian, LX
Tang, WM 
Lai, PT
Issue Date: 2014
Publisher: Electrochemical Society Inc.
Source: ECS electrochemistry letters, 2014, v. 3, no. 8, p. p87-p90 How to cite?
Journal: ECS Electrochemistry Letters 
Abstract: The effects of fluorine incorporation in amorphous InGaZnO by ion implant on the characteristics of InGaZnO thin-film transistor have been investigated. The electrical characteristics of thin-film transistor can be improved by this treatment due to increase of carrier concentration and passivation of defects in InGaZnO. Consequently, the saturation carrier mobility can be increased from 25.2 cm2/V s to a high value of 34.0 cm2/V s, and the output current can be nearly doubled. However, device degradation is observed for very high fluorine dose above 1.0 × 1015 /cm2, possibly ascribed to excessive interstitial fluorine atoms and too many fluorine-induced electrons in InGaZnO.
URI: http://hdl.handle.net/10397/16278
ISSN: 2162-8726
DOI: 10.1149/2.0121407ssl
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

1
Last Week
0
Last month
0
Citations as of Sep 11, 2017

WEB OF SCIENCETM
Citations

2
Last Week
0
Last month
0
Citations as of Sep 15, 2017

Page view(s)

41
Last Week
1
Last month
Checked on Sep 18, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.