Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/16198
Title: Synthetics of ZnO nanostructures by thermal oxidation in water vapor containing environments
Authors: Xu, CH
Lui, HF
Surya, C 
Keywords: Defects
Luminescence
Nanomaterials
Semiconductors
Thin films
Issue Date: 2011
Publisher: North-Holland
Source: Materials letters, 2011, v. 65, no. 1, p. 27-30 How to cite?
Journal: Materials letters 
Abstract: Metallic Zn films deposited on glass were wet or dry oxidized at 390 °C in pure N 2 or O 2 to understand the effects of water vapor in different oxygen partial pressure on growth of ZnO nanostructure during thermal oxidation. As-prepared ZnO oxides were characterized by a scanning electron microscope (SEM), an X-ray diffractometer (XRD), and a transmission electron microscope (TEM). Optical and electric properties of these ZnO films were characterized by photoluminescence (PL) and resistance measurements, respectively. It was found that the oxygen partial pressure and water vapor of environment significantly affect the morphologies of ZnO nanostructures. Decreasing oxygen partial pressure in dry oxidation can enhance a green light peak at 500 nm on PL spectra arising from defect-related emission and reduce the resistivity of the oxide films. High H 2O (g)/O 2 ratio in wet oxidation will significantly increase the intensity of a green light peak and reduce the resistivity of the oxide films. The effect of oxygen partial pressure and H 2O (g)/O 2 ratio on the PL spectra and resistivity of ZnO films are explained by the theory of defects equilibrium during oxidation.
URI: http://hdl.handle.net/10397/16198
ISSN: 0167-577X
EISSN: 1873-4979
DOI: 10.1016/j.matlet.2010.09.052
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