Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/16026
Title: The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs
Authors: Chen, XY
Ng, AMC
Fang, F
Djurisic, AB
Chan, WK
Tam, HL
Cheah, KW
Fong, PWK
Lui, HF
Surya, C 
Issue Date: 2010
Publisher: Electrochemical Soc Inc
Source: Journal of the electrochemical society, 2010, v. 157, no. 3, p. h308-h311 How to cite?
Journal: Journal of the Electrochemical Society 
Abstract: We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.
URI: http://hdl.handle.net/10397/16026
DOI: 10.1149/1.3282743
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