Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/15912
Title: Preparation of epitaxial compositionally graded (Ba1-xSrx)TiO3 thin films with enhanced dielectric properties
Authors: Zhu, X
Chan, HLW 
Choy, CL 
Wong, KH
Xu, J
Shi, S 
Issue Date: 2003
Source: Applied physics A : materials science and processing, 2003, v. 77, no. 3-4, p. 499-505 How to cite?
Journal: Applied Physics A: Materials Science and Processing 
Abstract: Epitaxial compositionally graded (Ba1-xSrx)TiO3 (BST) (0.0 ≤ × ≤ 0.25) thin films were deposited on (100) LaAlO3 substrates by pulsed laser ablation, the substrates having bottom electrodes made of 100-nm-thick conductive La0.5Sr0.5CoO3 (LSCO). Extensive X-ray diffraction, rocking-curve, and φ-scan studies indicate that the graded films are (100)-oriented and exhibit good in-plane relationships of [010]BST//[010]LAO and [001]BST//[001]LAO. For the up-graded films with barium concentration (1 - x) increasing across the film thickness in the direction from the film/substrate interface to the film surface, the full width at half maximum of the BST film (200) rocking curve and the surface roughness, examined by atomic force microscopy, were larger than those of the down-graded films with barium concentration decreasing from the film/substrate interface to the film surface. The dielectric properties of the graded films, measured using vertical structures, show that at room temperature, the dielectric constant (εr) and dissipation factor (tan δ) at 100 kHz were 380 and 0.013 for the up-graded films, and 650 and 0.010 for the down-graded films, respectively. The dielectric behavior was enhanced in the down-graded films, which was attributed to the fact that the pure BaTiO3 layer in the down-graded BST films not only serves as a bottom layer but also acts as an excellent seeding layer for enhancing subsequent film growth, leading to better film crystallinity and larger grain sizes in the down-graded films. The graded BST films undergo a diffuse phase transition, giving a broad, flat capacitance-versus-temperature profile. With such a graded structure, it is possible to build a dielectric thin-film capacitor having a capacitance which has a low temperature dependence over a broad temperature regime.
URI: http://hdl.handle.net/10397/15912
ISSN: 0947-8396
DOI: 10.1007/s00339-002-1478-5
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