Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/15809
Title: In-plane dielectric characterization of epitaxial Ba(Zr 0.35Ti0.65)O3 thin films grown on LSAT (001)
Authors: Yun, P
Wang, DY
Wang, Y
Chan, HLW 
Issue Date: 2007
Source: IEEE International Symposium on Applications of Ferroelectrics, 2007, 4393221, p. 222-225 How to cite?
Abstract: Ba(Zr0.35Ti0.65)O3 (BZT) thin film was deposited on (LaAlO3)0.3(Sr2AlTaO 6)0.35 [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr0.35Ti0.65)O3 thin film was characterized as a function of frequency (1 kHz - 1 GHz), temperature (-130 °C-100 °C) and dc electric field (0-13.3 V/μm) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 60% - 31.2% at room temperature in the frequency range of 1 kHz to 1 GHz, showing the potential of our Ba(Zr0.35Ti 0.65)O3 thin film to be used in microwave devices.
Description: 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, 27-31 May 2007
URI: http://hdl.handle.net/10397/15809
ISBN: 1424413338
9781424413331
DOI: 10.1109/ISAF.2007.4393221
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