Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/15712
Title: Oxygen pressure dependence of physical and electrical properties of LaAlO3 gate dielectric
Authors: Lu, XB
Lu, HB
Dai, JY 
Chen, ZH
He, M
Yang, GZ
Chan, HLW 
Choy, CL 
Keywords: Effective oxide thickness
Flatband voltage
High k dielectric
Interfacial reaction
Leakage current
Oxygen pressure
Issue Date: 2005
Publisher: Elsevier
Source: Microelectronic engineering, 2005, v. 77, no. 3-4, p. 399-404 How to cite?
Journal: Microelectronic engineering 
Abstract: High k LaAlO3 (LAO) films were deposited directly on silicon substrates in various oxygen pressures by laser molecular-beam epitaxy technique. The influence of oxygen pressures during film fabrication on the physical and electrical properties of LAO films was studied. High resolution transmission electron microscopy measurements indicate that the thermo stability of LAO films in contact with silicon substrates is greatly affected by oxygen pressures, and thicker interfacial layer would be expected for LAO films deposited in high oxygen pressure. Capacitance-voltage (C-V) and leakage current measurements indicate that the effective oxide thickness, leakage current, flatband voltage and hysteresis loop characteristics are affected by the oxygen pressure during film fabrication. Larger EOT, lower leakage current and smaller hysteresis loop is expected to be obtained for LAO films deposited in higher oxygen pressure or lower vacuum. When oxygen pressure is below or equal to 0.1 Pa, the absolute value of VFB increases with the decrease of oxygen pressure. When oxygen pressure is above 0.1 Pa, the VFB value begins to decrease slowly.
URI: http://hdl.handle.net/10397/15712
ISSN: 0167-9317
EISSN: 1873-5568
DOI: 10.1016/j.mee.2005.01.023
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