Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/15682
Title: Bottom-up synthesis of large-scale graphene oxide nanosheets
Authors: Tang, L
Li, X
Ji, R
Teng, KS
Tai, G
Ye, J
Wei, C
Lau, SP 
Issue Date: 2012
Publisher: Royal Society of Chemistry
Source: Journal of materials chemistry, 2012, v. 22, no. 12, p. 5676-5683 How to cite?
Journal: Journal of materials chemistry 
Abstract: Graphene oxide nanosheets (GONs) have attracted considerable interest due to their potential applications in electronic and optoelectronic devices. Graphene oxide (GO) is usually prepared by using Hummers' method or modified Hummers' methods, which require graphite and strong oxidizers, followed by exfoliation to obtain GONs. The main drawbacks of this top-down approach are the use of strong oxidizing agents and small lateral size of GONs. Here, we present a self-assembly method to synthesize GONs with tunable thickness ranging from ∼1 nm (monolayer) to ∼1500 nm. The lateral sizes of the monolayer and few-layer (<5) GONs are about 20 μm and 100 μm respectively. The GONs are prepared by a hydrothermal method using glucose as a sole reagent. The method is environmentally friendly, facile, low-cost as well as capable of scaling up for mass production. The electrical, optical and structural properties of the as-grown and annealed GONs are comparable to GO and reduced GO prepared by the top-down method, respectively. The electrical resistivity of the GONs can be tuned by annealing for 8 orders of magnitude ranging from 10 6 Ω cm to 10 -2 Ω cm. A GO-based photodetector has been fabricated, demonstrating the optoelectronic properties of the GONs.
URI: http://hdl.handle.net/10397/15682
ISSN: 0959-9428
EISSN: 1364-5501
DOI: 10.1039/c2jm15944a
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