Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/15284
Title: The application of bismuth-based oxides in organic-inorganic hybrid photovoltaic devices
Authors: Liu, Z
Yan, F 
Issue Date: 2012
Publisher: Wiley-Blackwell
Source: Journal of the American Ceramic Society, 2012, v. 95, no. 6, p. 1944-1948 How to cite?
Journal: Journal of the American Ceramic Society 
Abstract: Bismuth-based ferroelectric oxide films including BiFeO 3, Bi 2WO 6 and BiVO 4 with different band structure are prepared by pulsed laser deposition method and used as n-type semiconductors in photovoltaic devices. The oxide films are combined with p-type organic semiconductor poly(3-hexylthiophene) to form bilayer heterojunctions and their photovoltaic effects are systematically studied. Compared with some other oxide semiconductors, such as ZnO or TiO 2, the bismuth-based oxides exhibit wider absorption spectra and can induce higher external quantum efficiency, open circuit voltage, and power conversion efficiency of the hybrid devices, indicating that bismuth-based oxides are promising materials for photovoltaic devices.
URI: http://hdl.handle.net/10397/15284
ISSN: 0002-7820
EISSN: 1551-2916
DOI: 10.1111/j.1551-2916.2012.05088.x
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