Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/15111
Title: Ellipsometry study of InN thin films prepared by magnetron sputtering
Authors: Li, F
Mo, D
Cao, CB
Zhang, YL
Chan, HLW 
Choy, CL 
Issue Date: 2001
Publisher: Springer
Source: Journal of materials science : materials in electronics, 2001, v. 12, no. 12, p. 725-728 How to cite?
Journal: Journal of materials science : materials in electronics 
Abstract: Indium nitride (INN) thin films have been deposited on Si(100) substrates at temperature of 100-400°C by reactive radio frequency (RF) magnetron sputtering. We measured the ellipsometric spectra of the InN film samples, and obtained the optical constants for the wavelength range of 410-1100 nm. The absorption edge of the InN films is 1.85-1.90 eV. The thicknesses of various InN films are found to be dependent on the substrate temperature.
URI: http://hdl.handle.net/10397/15111
ISSN: 0957-4522
EISSN: 1573-482X
DOI: 10.1023/A:1012992810476
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