Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14954
Title: Resistance switching properties of epitaxial Pr 0.7Ca 0.3MnO 3 thin films with different electrodes
Authors: Lau, HK
Leung, CW 
Chan, YK
Issue Date: 2009
Publisher: Wiley-VCH
Source: Physica status solidi. A, Applications and materials science, 2009, v. 206, no. 9, p. 2182-2186 How to cite?
Journal: Physica status solidi. A, Applications and materials science 
Abstract: Resistance switching effect caused by external electric field was investigated in Pr 0.7Ca 0.3MnO 3 (PCMO) thin films grown on (001)-oriented LaAlO 3, by using different metallic (Al, Pt, Au, Ti) electrodes. When Al was used as one or both of the electrodes, PCMO thin films exhibited resistance changes upon reversing voltage polarities. Nonlinear, hysteretic current-voltage loops were observed. Our measurements showed that the total resistance of the samples were dominated by interfacial resistance. Such kind of device structure can find applications in non-volatile memory devices.
URI: http://hdl.handle.net/10397/14954
ISSN: 1862-6300
EISSN: 1862-6319
DOI: 10.1002/pssa.200881782
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