Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14874
Title: Effects of interface dislocations on properties of ferroelectric thin films
Authors: Zheng, Y
Wang, B
Woo, CH 
Keywords: Coercive field
Ferroelectric thin film
Interface dislocations
Remnant polarization
Self polarization
Issue Date: 2007
Publisher: Pergamon-Elsevier Science Ltd
Source: Journal of the mechanics and physics of solids, 2007, v. 55, no. 8, p. 1661-1676 How to cite?
Journal: Journal of the Mechanics and Physics of Solids 
Abstract: Effects of interfacial dislocations on properties of thin-film ferroelectric materials, such as the self-polarization distribution, Curie temperature, dielectric constant and the switching behaviors, are investigated via the system dynamics based on the Landau-Devonshire functional. Dislocation generation in the film is found to reduce the overall self-polarization and the Curie temperature. The spatial variations are both very strong, particularly in the immediate neighborhood of the dislocation cores. In agreement with previous results based on a stationary model, a dead layer exists near the film/substrate interface, in which the average self-polarization is much reduced. Moreover, it is evident from our results that interface dislocations play an important role in suppressing the remnant polarization and the coercive field of the polarization.
URI: http://hdl.handle.net/10397/14874
DOI: 10.1016/j.jmps.2007.01.011
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