Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14841
Title: A prerequisite to achieving high performance polymer/inorganic thin film diodes
Authors: Liem, H
Choy, HS
Yung, KC 
Keywords: A. PEDOT
A. ZnO
B. Diode
E. Raman
Issue Date: 2010
Publisher: Pergamon-Elsevier Science Ltd
Source: Solid state communications, 2010, v. 150, no. 37-38, p. 1725-1728 How to cite?
Journal: Solid State Communications 
Abstract: An alternative approach to high performance polymeric rectifiers based on p-type polymer poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and an n-type zinc oxide (ZnO) films is demonstrated. It is evident that nanoscale grain compatibility at an interface does not ensure that the device has the highest performance, but only a prerequisite for the two materials to exhibit the interaction. Being a non-invasive probe, Raman spectroscopy is used to monitor the degree of interaction between PEDOT:PSS and ZnO films. High performance of devices is achieved by the control of grain matching and more essentially, by the strong interaction of molecules at the interface. The developed PEDOT:PSS/ZnO diode can rectify an incoming a.c. voltage signal at frequencies up to 18 MHz. Operating with a low turn-on voltage, the diode has a current density of 220 mAcm2 and a rectification ratio of 4000 in the open atmosphere which are higher than previously reported polymer/inorganic vertical diodes.
URI: http://hdl.handle.net/10397/14841
DOI: 10.1016/j.ssc.2010.07.038
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