Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14732
Title: Epitaxial growth of (PbZr)TiO3 films on LaAlO3 by sol-gel method using inorganic zirconium source
Authors: Li, AD
Shao, QY
Wang, YJ
Mak, CL 
Wong, KH
Wu, D
Ming, N
Keywords: A. Thin films
B. Epitaxial growth
B. Sol-gel chemistry
C. X-ray diffraction
Issue Date: 2001
Publisher: Pergamon Press
Source: Materials research bulletin, 2001, v. 36, no. 15, p. 2667-2675 How to cite?
Journal: Materials research bulletin 
Abstract: Epitaxial ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films were successfully fabricated on LaAlO3 substrates using an inorganic zirconium source by the sol-gel method. Single-phase perovskite formation was achieved by rapid thermal anneal at 650°C. Temperature dependence of the structural and morphological characteristics of sol-gel-derived PZT films were investigated by means of X-ray diffraction θ-2θ scan, rocking curve, and φ-scan, scanning electron microscopy, and atomic force microscopy. The films showed better epitaxy and density with smaller roughness. In addition, the characteristic of sol-gel-derived PZT thin films using the mixed PZT powder/precursor solution was also studied.
URI: http://hdl.handle.net/10397/14732
ISSN: 0025-5408
DOI: 10.1016/S0025-5408(01)00760-7
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