Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14637
Title: Investigation of the role of oxygen vacancies on polarization fatigue in ferroelectric thin films
Authors: Lo, VC
Chen, Z
Keywords: Fatigue
Interface
Modeling
Oxygen vacancy
Issue Date: 2001
Publisher: Taylor & Francis Inc.
Source: Ferroelectrics, 2001, v. 259, no. 1, p. 145-150 How to cite?
Journal: Ferroelectrics 
Abstract: The role of oxygen vacancies in ferroelectric thin films is investigated using numerical simulation. In a perovskite cell, the octahedral cage surrounded by oxygen ions is distorted in the presence of oxygen vacancy. Consequently, it results in an asymmetric double-well potential profile along the c-axis of the cell. Ti4+ prefers to stay at the lower minimum on one side of the cell than the other side having a higher local minimum. This asymmetric potential profile affects the flipping probability of a dipole in Icing Model. On the other hand, oxygen also traps a hole, resulting in a space charge. The accumulation of space charge suppresses the electric field inside the film. Thus the switching of dipoles is impeded. Both the vacancy and space charge distributions are included to simulate fatigue, imprint and thickness effect.
Description: 3rd Asian Meeting on Ferroelectrics, AMF-3, Hong Kong, 12-15 December 2002
URI: http://hdl.handle.net/10397/14637
ISSN: 0015-0193
EISSN: 1563-5112
DOI: 10.1080/00150190108008731
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