Please use this identifier to cite or link to this item:
Title: Study of parasitic and stray components induced ringings in class e power amplifiers in MHz range
Authors: Zhang, H
Wong, SC 
Tse, CK 
Ma, X
Issue Date: 2005
Source: Proceedings of the 2005 European Conference on Circuit Theory and Design, 2005, v. 3, 1523077, p. 129-132 How to cite?
Abstract: For Class E power amplifier circuits operating at switching frequencies of the MHz range or higher, the parasitic capacitance of the MOS transistor switch becomes a significant part of the circuit adding to the usual intended circuit components. For the Class E power amplifier, this is often regarded as an advantage because the parasitic capacitor can be utilized for achieving zero voltage and current switchings, thus reducing the size of an external capacitor which has to be inserted. However, parallel connection of parasitic, stray and external capacitors may give rise to high-frequency ringings of the voltage across the switch, causing the circuit to deviate from the desired Class E operation. In this paper, the phenomenon and its underlying cause is studied by simulations and experiments. A circuit model of the amplifier with parasitic or stray components is developed to explain the phenomenon.
Description: 2005 European Conference on Circuit Theory and Design, Cork, 28 August-2 September 2005
ISBN: 0780390660
DOI: 10.1109/ECCTD.2005.1523077
Appears in Collections:Conference Paper

View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

Last Week
Last month
Checked on Aug 20, 2017

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.