Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14580
Title: Pulsed-laser-deposited epitaxial aluminum nitride films on (111) SI for surface acoustic-wave applications
Authors: Liu, JM
Chong, N
Chan, HLW 
Wong, KH
Choy, CL 
Issue Date: 2003
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2003, v. 76, no. 1, p. 93-96 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: Epitaxial (001) aluminum nitride (AlN) thin films on (111) Si substrates are prepared using pulsed-laser deposition. The epitaxial structure of the as-prepared thin films is characterized by checking the X-ray diffraction θ - 2θ scan and pole-figure, using scanning electron microscopy, infrared radiation (IR) spectroscopy and Raman spectroscopy. The surface acoustic-wave resonance at 345 MHz for a 1.5 μm thick AlN film on a (111) Si substrate is observed using an interdigital electrode.
URI: http://hdl.handle.net/10397/14580
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s003390201312
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