Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14461
Title: Highly sensitive organic near-infrared phototransistors based on poly(3-hexylthiophene) and PbS quantum dots
Authors: Sun, Z
Li, J
Yan, F 
Issue Date: 2012
Publisher: Royal Society of Chemistry
Source: Journal of materials chemistry, 2012, v. 22, no. 40, p. 21673-21678 How to cite?
Journal: Journal of materials chemistry 
Abstract: Highly sensitive near-infrared (NIR) phototransistors based on poly(3-hexylthiophene) (P3HT) and lead sulfide quantum dots (PbS QDs) were fabricated by a solution process. The phototransistors show high responsivity up to 2 × 10 4 A W -1 under NIR illumination with wavelength of 895 nm, which is much bigger than that of the photodetectors based on PbS QDs or organic semiconductors only. The sensing mechanism is attributed to the photo-induced electrons generated in the PbS QDs, which increase the threshold voltage of the transistor. These phototransistors may find promising applications as infrared sensors for their high responsivity, easy fabrication, low cost and flexibility.
URI: http://hdl.handle.net/10397/14461
ISSN: 0959-9428
EISSN: 1364-5501
DOI: 10.1039/c2jm34773c
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

32
Last Week
1
Last month
0
Citations as of Jul 9, 2018

WEB OF SCIENCETM
Citations

33
Last Week
0
Last month
0
Citations as of Jul 16, 2018

Page view(s)

44
Last Week
0
Last month
Citations as of Jul 15, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.