Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14299
Title: Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT
Authors: Zhou, C
Wang, X
Raju, S
Lin, Z
Villaroman, D
Huang, B
Chan, HLW 
Chan, M
Chai, Y 
Issue Date: 2015
Publisher: Royal Society of Chemistry
Source: Nanoscale, 2015, v. 7, no. 19, p. 8695-8700 How to cite?
Journal: Nanoscale 
Abstract: MoS2 and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ?1.1 nm has been obtained by using ultra high-k gate dielectric Pb(Zr0.52Ti0.48)O3. The low threshold voltage (<0.5 V) is comparable to that of the liquid/gel gated MoS2 transistor. The small sub-threshold swing of 85.9 mV dec-1, the high ON/OFF ratio of ?108 and the negligible hysteresis ensure a high performance of the MoS2 transistor operating at 1 V. The extracted field-effect mobility of 1-10 cm2 V-1 s-1 suggests a high crystalline quality of the CVD-grown MoS2 flakes. The combination of the two-dimensional layered semiconductor and the ultra high-k dielectric may enable the development of low-power electronic applications.
URI: http://hdl.handle.net/10397/14299
ISSN: 2040-3364
EISSN: 2040-3372
DOI: 10.1039/c5nr01072a
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