Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/14220
Title: Dielectric properties and microstructures of Ba1-xSrxTiO3 epitaxial thin films with compositional gradients normal to the substrates
Authors: Zhu, XH
Chan, HLW 
Choy, CL
Wong, KH
Keywords: Compositionally-graded films
(Ba1-xSrx)TiO3
Dielectric properties
Microstructures
Issue Date: 2002
Publisher: Taylor & Francis Ltd
Source: Integrated ferroelectrics, 2002, v. 45, p. 141-150 How to cite?
Journal: Integrated Ferroelectrics 
Abstract: The characterizations of microstructures and dielectric properties of epitaxial Ba1-xSrxTiO3(0.0 less than or equal to x less than or equal to 0.25) (BST) thin films with compositional gradients normal to the substrates are reported. The compositionally-graded BST films with increasing x from 0.0 to 0.25 were deposited layer-by-layer on MgO (100) single-crystal substrates by pulsed laser deposition. X-ray diffraction, rocking curve, and phi scans showed that the graded films are epitaxial growth with (100)(BST) //(100)(MgO). Surface morphologies of the graded BST films were examined by atom force microscopy. Compositional distributions across sections of graded BST films were characterized by Rutherford backscattering spectrometry. The dielectric constant and dielectric loss of the graded BST films measured at 10 kHz by vertical structures using LSCO as bottom electrodes, were 715 and 0.0103, respectively. The graded BST films exhibit a broad and flat profile of the dielectric constant versus temperature. Such behavior of the dielectric response is attributed to the presence of the compositional and/or residual strain gradients in the epitaxial graded films. With such graded structure, it is possible to build a dielectric thin film capacitor with a low temperature dependence of the capacitor over a broad temperature range.
Description: 14th International Symposium on Integrated Ferroelectrics/13th IEEE Int Symposium on the Applications of Ferroelectrics/19th Meeting on Ferroelectric Mat and their Applicat, Nara, Japan, 28 May- 1 June 2002
URI: http://hdl.handle.net/10397/14220
ISSN: 1058-4587
DOI: 10.1080/10584580190044047
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