Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/13962
Title: Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon
Authors: Chai, Y
Wu, Y
Takei, K
Chen, HY
Yu, S
Chan, PCH 
Javey, A
Wong, H
Keywords: Amorphous carbon (a-C)
Carbon nanotube (CNT)
Complementary resistive switching
Nonvolatile memory
Resistive random access memory (RRAM)
Resistive switching memory
Issue Date: 2011
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2011, v. 58, no. 11, 6026917, p. 3933-3939 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: There has been a strong demand for developing an ultradense and low-power nonvolatile memory technology. In this paper, we present a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode. An amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior. The use of the CNT electrode can substantially reduce the size of the active device area. We also demonstrate a carbon-based complementary resistive switch (CRS) consisting of two back-to-back connected memory cells, providing a route to reduce the sneak current in the cross-point memory. The bit information of the CRS cell is stored in a high-resistance state, thus reducing the power consumption of the CRS memory cell. This paper provides valuable early data on the effect of electrode size scaling down to nanometer size.
URI: http://hdl.handle.net/10397/13962
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/TED.2011.2164615
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