Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/13895
Title: Dielectric properties of (Ba0.5Sr0.5)TiO3 thin films
Authors: Yan, F
Bao, P
Zhang, Z
Zhu, J
Wang, Y
Chan, HLW 
Choy, CL 
Issue Date: 2000
Publisher: Elsevier Sequoia SA
Source: Thin solid films, 2000, v. 375, no. 1-2, p. 184-187 How to cite?
Journal: Thin Solid Films 
Abstract: The dielectric properties of (Ba0.5Sr0.5)TiO3 (BST) thin films with high electrical resistivity were investigated. BST films are deposited on Pt/TiO2/SiO2/Si substrates by a metal-organic deposition (MOD) method. The dielectric permittivity and ac conductivity of the films are measured in the frequency range 102-105 Hz. The dielectric permittivity εr decreases slightly with frequency f, following the relationship εr = a+bfn-1 (a, b and n are constants, n<1). The ac conductivity σ(f) increases with frequency as σ(f) to approximately fn. These results indicate that the phonon-assisted jumps of electrons between localized states play an important role in the dielectric properties of BST thin films. The dielectric permittivity and ac conductivity of the BST thin films increase with grain size, and decrease with increasing temperature. A preliminary explanation is given.
URI: http://hdl.handle.net/10397/13895
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(00)01230-X
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