Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/13418
Title: Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate
Authors: Qiu, XY
Zhou, GD
Li, J
Chen, Y
Wang, XH
Dai, JY 
Keywords: Floating gate memory
Nanocrystals
Silver
Tunneling mechanism
Issue Date: 2014
Publisher: Elsevier
Source: Thin solid films, 2014, v. 562, p. 674-679 How to cite?
Journal: Thin solid films 
Abstract: A nano-floating gate memory capacitor consisting of a stack of 3 nm-thick HfAlOx tunneling layer, self-organized Ag nanocrystals (NCs), and a 6 nm-thick HfAlOx control layer, has been fabricated on compressively strained p-type Si83Ge17/Si(100) substrates by radio-frequency magnetron sputtering. The Ag-NCs with a size of 5-8 nm and a density of 5.7 × 1012/cm2 are well dispersed in the amorphous HfAlOx matrix. Counterclockwise hysteresis capacitance-voltage curve with a memory window of ∼ 2 V, corresponding to a charge storage density of about 1.3 × 1013 electrons/cm 2, is observed in this memory capacitor. The accumulation capacitance of this memory capacitor has no obvious decrease during electrical stressing process within a period of 104 s, but the memory window gradually becomes narrower, and only 54% stored charges are retained in the Ag-NCs after 105 s stressing. Defect-enhanced Poole-Frenkel tunneling is found to be responsible for the degradation of memory properties.
URI: http://hdl.handle.net/10397/13418
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/j.tsf.2014.03.086
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