Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/1338
Title: Ultraviolet detector
Authors: Surya, C 
Fong, WKP
Keywords: UV detector
UV radiation
Gallium nitride
Molecular beam epitaxy
RF-plasma
Issue Date: 30-Dec-2008
Source: US Patent 7,470,940 B2. Washington, DC: US Patent and Trademark Office, 2008. How to cite?
Abstract: An UV detector, comprising: a sapphire substrate; a high temperature AlN buffer layer grown on the sapphire substrate; an intermediate temperature GaN buffer layer grown on the high temperature AlN buffer layer; a GaN epitaxial layer deposited on the intermediate temperature GaN buffer layer; a Schottky junction formed on top of the GaN epitaxial layer; and a plurality of ohmic contacts also formed on top of the GaN epitaxial layer, wherein, the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer together form a double buffer layer structure so as to improve the reliability and radiation hardness of the UV detector; and wherein the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer are formed by RF-plasma enhanced MBE growth technology.
URI: http://hdl.handle.net/10397/1338
Rights: Assignee: The Hong Kong Polytechnic University.
Appears in Collections:Patent

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