Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/1338
Title: | Ultraviolet detector | Authors: | Surya, C Fong, WKP |
Issue Date: | 30-Dec-2008 | Source: | US Patent 7,470,940 B2. Washington, DC: US Patent and Trademark Office, 2008. | Abstract: | An UV detector, comprising: a sapphire substrate; a high temperature AlN buffer layer grown on the sapphire substrate; an intermediate temperature GaN buffer layer grown on the high temperature AlN buffer layer; a GaN epitaxial layer deposited on the intermediate temperature GaN buffer layer; a Schottky junction formed on top of the GaN epitaxial layer; and a plurality of ohmic contacts also formed on top of the GaN epitaxial layer, wherein, the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer together form a double buffer layer structure so as to improve the reliability and radiation hardness of the UV detector; and wherein the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer are formed by RF-plasma enhanced MBE growth technology. | Keywords: | UV detector UV radiation Gallium nitride Molecular beam epitaxy RF-plasma |
Rights: | Assignee: The Hong Kong Polytechnic University. |
Appears in Collections: | Patent |
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us7470940b2.pdf | 362.39 kB | Adobe PDF | View/Open |
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