Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/13032
Title: Highly c-oriented LiNbO3 films on polycrystalline diamond substrate for high frequency surface acoustic wave devices
Authors: Lam, HK
Dai, JY 
Chan, HLW 
Keywords: Aluminum oxide
Buffer layer
Diamond
LiNbO3
Pulsed laser deposition
Surface acoustic wave
Issue Date: 2004
Publisher: Institute of Pure and Applied Physics
Source: Japanese journal of applied physics. Part 2, Letters, 2004, v. 43, no. 6A, p. L706-L708 How to cite?
Journal: Japanese journal of applied physics. Part 2, Letters 
Abstract: Highly c-oriented LiNbO3 films were deposited on aluminum oxide (Al2O3) buffered diamond substrates by a novel two-step pulsed laser deposition. The two-step growth method (growth at 500 mTorr oxygen partial pressure for 15s followed by 12 min growth at 100 mTorr oxygen pressure) greatly enhanced the c-oriented LiNbO3 film crystallinity and improved the film surface flatness. The Al2O3 buffer layer was shown to be able to protect the diamond surface from oxidation during LiNbO3 film growth under high oxygen pressure and also favorable for c-oriented LiNbO3 film growth. By utilizing such a stacked structure of LiNbO3/Al2O3/diamond, surface acoustic wave devices were fabricated and characterized.
URI: http://hdl.handle.net/10397/13032
ISSN: 0021-4922
EISSN: 1347-4065
DOI: 10.1143/JJAP.43.L706
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

2
Last Week
0
Last month
0
Citations as of Jul 30, 2017

WEB OF SCIENCETM
Citations

2
Last Week
0
Last month
0
Citations as of Aug 13, 2017

Page view(s)

31
Last Week
1
Last month
Checked on Aug 14, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.