Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/12872
Title: Simulation of the effects of space charge and Schottky barriers on ferroelectric thin film capacitor using Landau Khalatnikov theory
Authors: Lo, VC
Chen, ZJ
Issue Date: 2002
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2002, v. 49, no. 7, p. 980-986 How to cite?
Journal: IEEE transactions on ultrasonics, ferroelectrics, and frequency control 
Abstract: The roles of space charge induced in the ferroelectric thin film and the presence of Schottky barriers at the two electrode/film interfaces are studied by numerical simulation using Landau-Khalatnikov theory. In this work, the whole film is considered as the stacking of dipolar layers, each of which contains multilayers of perovskite cells. In the presence of a local electric field, the double-well thermodynamic potential of each layer is modified into an asymmetric manner. The local electric field distribution is determined both by the space charge and the boundary conditions imposed by the Schottky barrier heights. The asymmetric and skewed hysteresis loops are generated.
URI: http://hdl.handle.net/10397/12872
ISSN: 0885-3010
EISSN: 1525-8955
DOI: 10.1109/TUFFC.2002.1020168
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