Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/12708
Title: Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HFTiO as gate dielectric
Authors: Han, CY
Leung, CH
Lai, PT
Tang, WM
Che, CM
Keywords: HfTiO
OTFT
Dielectric
High k
Issue Date: 2013
Publisher: IEEE
Source: 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), 3-5 June 2013, Hong Kong, p. 1-2 How to cite?
Abstract: Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V·s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.
URI: http://hdl.handle.net/10397/12708
ISBN: 
DOI: 10.1109/EDSSC.2013.6628118
Appears in Collections:Conference Paper

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