Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/12448
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Electrical Engineering-
dc.creatorZhang, L-
dc.creatorOr, SW-
dc.creatorLeung, CM-
dc.creatorHo, SL-
dc.date.accessioned2015-05-26T08:16:58Z-
dc.date.available2015-05-26T08:16:58Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/12448-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2014 AIP Publishing LLC.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in L. Zhang et al., J. Appl. Phys. 115, 17E520 (2014) and may be found at https://dx.doi.org/10.1063/1.4866516en_US
dc.titleDC magnetic field sensor based on electric driving and magnetic tuning in piezoelectric/magnetostrictive bilayeren_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume115-
dc.identifier.issue17-
dc.identifier.doi10.1063/1.4866516-
dcterms.abstractA dc magnetic field sensor possessing an interestingly high electric voltage-driven, magnetic field-tuned dc magnetoelectric (ME) effect is developed based on a bilayer of Pb(Zr, Ti)O3 piezoelectric transformer and Tb0.3Dy0.7Fe1.92 magnetostrictive substrate. The dc ME effect in the sensor, as evaluated experimentally and theoretically, is induced by driving the bilayer at its zero-field longitudinal resonance frequency (fr0) using an ac electric voltage (Vac) referenced at the input of the piezoelectric transformer, as well as, by tuning the field-dependent compliance and resonance characteristics of the bilayer with the dc magnetic field to be measured (Hdc) upon the negative-ΔE effect intrinsic in the magnetostrictive substrate. The sensor shows a good linear negative response of ac ME voltage (VME) at the output of the piezoelectric transformer to a broad range of Hdc of 0-350 Oe under a small Vac of 2.5 V peak at the designated fr0 of 125.3 kHz. This gives a high negative dc magnetic field sensitivity (S) of -1.58 mV/Oe.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 2014, v. 115, no. 17, 17E520, p. 17E520-1-17E520-3-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2014-
dc.identifier.isiWOS:000335643700541-
dc.identifier.scopus2-s2.0-84903885090-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr69014-
dc.description.ros2013-2014 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
Zhang_DC_Magnetic_Sensor.pdf910.27 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

138
Last Week
1
Last month
Citations as of Apr 21, 2024

Downloads

97
Citations as of Apr 21, 2024

SCOPUSTM   
Citations

4
Last Week
0
Last month
0
Citations as of Apr 19, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.