Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/12246
Title: Dielectric characteristics of in-plane polarized lead zirconate titanate thin films on oxide layers
Authors: Kwok, KP
Kwok, KW 
Tsang, CW
Chan, HLW 
Choy, CL 
Keywords: Buffer layers
In-plane polarization
PZT films
Sol-gel
STO
Issue Date: 2003
Publisher: Taylor & Francis
Source: Integrated ferroelectrics, 2003, v. 54, p. 733-739 How to cite?
Journal: Integrated ferroelectrics 
Abstract: Sol-gel derived lead zirconate titanate (PZT) films have been prepared on STO-passivated silicon substrates. The STO buffer layer of thickness about 55 nm is prepared by rf-magnetron sputtering. XRD results reveal that the PZT film has well-crystallized perovskite phase, indicating that the thin STO layer can effectively prevent reaction and inter-diffusion between the PZT film and silicon substrate. Inter-digitated electrodes (IDEs) have then been deposited on the PZT film by magnetron sputtering and patterned using the standard photolithography. With the IDEs, the dielectric and ferroelectric properties of the PZT film under transverse or in-plane electric fields have been investigated. By assuming a uniform distribution of electric field (in-plane electric field model), the estimated relative permittivity of the PZT film is about 2100, while the dielectric loss is less than 1%. Good in-plane polarization hysteresis loop is observed, showing an observed remanent polarization value of 21 μC/cm2, which is comparable to that of a PZT film with both top and bottom electrodes. The in-plane polarized PZT/STO/SiO2/Si film can be used to fabricate d33-mode unimorph bending transducers, which will have much better performance than the conventional bending transducers driven electromechanically through the piezoelectric d31 mode.
URI: http://hdl.handle.net/10397/12246
ISSN: 1058-4587
EISSN: 1607-8489
DOI: 10.1080/10584580390259182
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