Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/12088
Title: Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity
Authors: Sun, Z
Liu, Z
Li, J
Tai, GA
Lau, SP 
Yan, F 
Keywords: graphene
infrared sensors
lead sulfide
phototransistors
quantum dots
Issue Date: 2012
Publisher: Wiley-VCH
Source: Advanced materials, 2012, v. 24, no. 43, p. 5878-5883 How to cite?
Journal: Advanced materials 
Abstract: Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 107 A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots.
URI: http://hdl.handle.net/10397/12088
ISSN: 0935-9648
EISSN: 1521-4095
DOI: 10.1002/adma.201202220
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