Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11856
Title: Characterizations of bismuth telluride/gallium nitride heterojunction photovoltaic detector for MWIR detection under room temperature
Authors: Pang, MY
Lui, HF
Li, WS
Wong, KH
Surya, C 
Issue Date: 2009
Publisher: Institute of Physics Publishing
Source: Journal of physics. Conference series, 2009, v. 152, no. 1, p. 12046- How to cite?
Journal: Journal of physics. Conference series 
Abstract: Uncooled infrared detectors have aroused keen interest in narrow bandgap semiconductor research. We propose to use Bismuth Telluride (Bi2Te3) bandgap energy of about 0.15 eV for middle wavelength IR (MWIR) detection. In this work, a heterojunction structure of Bi2Te3/GaN/Al2O3 was fabricated to form a photovoltaic detector. The structural properties of Bi2Te3 thin films were characterized by high resolution x-ray diffraction spectroscopy. Crystallinity of Bi2Te3 thin films was found to be strongly dependent on deposition temperatures. The spectral current responsivity for this heterojunction in NIR-to-MWIR region was evaluated under back-side illumination. The devices were also characterized by studying their low-frequency noise spectra measurement. The experimental results suggest that, the noise level of the devices is correlated to the crystallinity of the Bi2Te3 thin films.
URI: http://hdl.handle.net/10397/11856
ISSN: 1742-6588
DOI: 10.1088/1742-6596/152/1/012046
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