Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11848
Title: Formation of Ge nanocrystals by utilizing nanocluster source
Authors: Lee, PF
Dai, JY 
Chan, HLW 
Keywords: Ge
Nanocluster source
Nonvolatile memory
Issue Date: 2006
Source: Materials science in semiconductor processing, 2006, v. 9, no. 4-5 SPEC. ISS., p. 817-822 How to cite?
Journal: Materials Science in Semiconductor Processing 
Abstract: A novel method has been introduced in the fabrication process of semiconductor nanocrystal (NC). It consists of a magnetron sputtering system connects with an ultra-high vacuum (UHV) chamber. By varying aggregation lengths, sputtering gas (Ar) pressure and ionization power, nanoclusters of semiconductor material with different sizes can be formed. Multi-layered thin film structure with the embedment of Ge nanocrystals (Ge-NC) has been achieved by utilizing this new type of combination of two vacuum coating systems. High-resolution transmission electron microscopy study revealed that the average size of the Ge-NCs formed is about 10-30 nm in diameter and uniformly distributed for various growth conditions. The trilayer structure (HfAlO/Ge-NC/HfAlO/Si) was fabricated by pulsed-laser deposition and NC200U nanocluster source at a relatively low growth temperature with different growth time of Ge-NCs. The memory effect manifested by the counterclockwise hysteresis loop in the C-V measurement showed that a charge density of 3×1010 cm-2 and a flat band voltage shift of 1.5 V have been achieved.
URI: http://hdl.handle.net/10397/11848
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2006.08.054
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

4
Last Week
0
Last month
0
Citations as of Dec 9, 2017

WEB OF SCIENCETM
Citations

4
Last Week
0
Last month
1
Citations as of Dec 9, 2017

Page view(s)

48
Last Week
2
Last month
Checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.