Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11777
Title: A comparison of ferroelectric properties of sol-gel PLT films on different electrodes
Authors: Li, J
Yuan, N
Li, K
Tong, KY
Chan, HLW 
Keywords: Ferroelectric thin film
Oxide electrode
Sol-Gel
Issue Date: 2001
Publisher: Taylor & Francis Inc.
Source: Ferroelectrics, 2001, v. 260, no. 1, p. 195-200 How to cite?
Journal: Ferroelectrics 
Abstract: Sol-gel ferroelectric thin films of PLT [(PbxLa y)TiO3, x/y = 83/17, x+1.5y=1] were prepared by spin coating on ITO, SnO2 and Pt substrates. The properties of PLT films after rapid thermal annealing (RTA) were tested by X-ray Diffraction (XRD) for orientation of crystallization, and by RT66A for ferroelectric hysteresis loops, remnant polarization, switching characteristics, leakage current density and fatigue property. The results show that sol-gel PLT films can crystallize properly based on the above three substrates. Compared with PLT films on Pt substrates, the leakage current density of PLT films on ITO and SnO2 substrates was about one order higher, but the remnant polarization was greater and the fatigue property was obviously better.
URI: http://hdl.handle.net/10397/11777
ISSN: 0015-0193
EISSN: 1563-5112
DOI: 10.1080/00150190108016016
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