Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11759
Title: Comparison of VO2 thin films prepared by inorganic sol-gel and IBED methods
Authors: Yuan, NY
Li, JH
Chan, HLW 
Li, CL
Issue Date: 2004
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2004, v. 78, no. 5, p. 777-780 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: VO2 thin films with semiconductor-to-metal phase-transition properties were prepared by inorganic sol-gel and IBED (ion-beam-enhanced deposition) methods on SiO2/Si substrate. The crystalline phase and the shape and width of the hysteresis curves of these VO2 films were significantly different. For sol-gel VO2 films, the transition started at close to 62°C upon heating. The temperature interval needed to complete the phase transition was 80°C, the ratio of resistance (R 20°C/R80°C) reached three orders and the hysteresis width was 6°C. However, the IBED film post-annealed in Ar at 700°C underwent a phase transition from 45°C to 80°C, the ratio of resistance was more than two orders and the hysteresis width was 2°C. In addition, the TCR (temperature coefficient of resistance) at 22°C of the IBED film was 3.5%/K, much larger than the 0.7%/K TCR of the sol-gel film.
URI: http://hdl.handle.net/10397/11759
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-002-2057-5
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