Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11753
Title: Correlation between the composition, structure and properties of dual ion beam deposited SiNx films
Authors: Tsang, MP
Ong, CW 
Choy, CL
Lim, PK
Hung, WW
Keywords: Hardness
Optical band gap
Silicon nitride
Issue Date: 2003
Publisher: Elsevier
Source: Thin solid films, 2003, v. 424, no. 1, p. 143-147 How to cite?
Journal: Thin solid films 
Abstract: Silicon nitride (SiNx) films were prepared by dual ion beam deposition at room temperature. An assisted N2 + ion beam (current Ib=0-45 mA) was directed to bombard the substrate surface to control the N content x, which saturated at x≈1.36 when Ib≥25 mA. The presence of Si-N bonds was indicated by the appearance of a Si 2p photoelectron peak at 101.9 eV and an infrared absorption peak at 850 cm-1. As x increases from 0 to 1.36, the hardness, elastic modulus and compressive stress increase from 12.2 to 21.5 GPa, 191 to 256 GPa and 0.52 to 1.4 GPa and the friction coefficient against stainless steel ball decreases from 0.65 to 0.37. The optical band gap increases remarkably with a concomitant drop in electrical conductivity (σRT) by more than 107 times. Ion bombardment induces defects and trap states in the mid-gap, such that the transport mechanism is dominated by hopping of charge carriers through the trap states. Consequently, the activation energy of electrical conductivity is much lower than the optical band gap.
Description: proceedings of the 1st Ineternational Conference on Materials, Singapore, 1-6 July 2001
URI: http://hdl.handle.net/10397/11753
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/S0040-6090(02)00916-1
Appears in Collections:Conference Paper

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

7
Last Week
0
Last month
0
Citations as of Aug 14, 2017

WEB OF SCIENCETM
Citations

7
Last Week
0
Last month
0
Citations as of Aug 21, 2017

Page view(s)

41
Last Week
0
Last month
Checked on Aug 20, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.