Topological phase change transistor based on Weel semiconductor and preparation method thereof

Abstract

The invention discloses a topological phase change transistor based on a Weel semiconductor and a preparation method. The transistor comprises a Weel semiconductor layer; the source electrode is arranged on the WeChat semiconductor layer; the drain electrode is arranged on the Weel semiconductor layer, and the drain electrode and the source electrode are arranged at an interval; the grid electrode is connected with the WeChat semiconductor layer; the topological phase change of the Weel semiconductor layer is realized under the electrostatic regulation of the grid electrode, so that the topological phase change transistor based on the Weel semiconductor is in an on state or an off state. According to the invention, the Belite curvature of the Weel semiconductor and the adjustable characteristic of the corresponding aging number are utilized, so that the topological phase change between the traditional semiconductor with the aging number of 0 and the topological semimetal with the aging number of 1 is realized. The field effect transistor with low power consumption and high performance is realized. Through electrostatic regulation and control, the switch ratio of 108 and the on-state conductivity of 39 millisiemens per micron are realized. 本发明公开了一种基于外尔半导体的拓扑相变晶体管及制备方法，晶体管包括：外尔半导体层；源极，设置于所述外尔半导体层；漏极，设置于所述外尔半导体层，与所述源极间隔设置；栅极，与所述外尔半导体层连接；其中，在所述栅极的静电调控下所述外尔半导体层拓扑相变，以使所述基于外尔半导体的拓扑相变晶体管呈开态或关态。本发明利用外尔半导体的贝利曲率和对应的陈数可调特性，实现了陈数为0的传统半导体和陈数为1的拓扑半金属间的拓扑相变。实现具低功耗和高性能的场效应晶体管。通过静电调控，实现了108开关比和39毫西门子每微米的开态电导。