Field effect transistor based on two-dimensional tellurene and preparation method thereof

Abstract

The invention discloses a field effect transistor based on two-dimensional tellurene and a preparation method thereof. The field effect transistor based on the two-dimensional tellurene comprises a dielectric layer, a two-dimensional tellurene layer located on the dielectric layer, platinum layers located at the two ends of the two-dimensional tellurene layer, and gold layers located on the platinum layers at the two ends. According to the field effect transistor, the high-work-content metal platinum is used as the contact metal of the two-dimensional tellurene, so that the contact resistance of the field effect transistor is reduced, and the performance of the device is improved. Because the metal platinum has a high work function of 5.65 eV, which is far greater than the valence band top (about 4.35 eV) of the two-dimensional tellurium ene, a small Schottky barrier can be formed on the interface of the metal platinum and the two-dimensional tellurium ene, hole transport in the two-dimensional tellurium ene is promoted, the contact resistance of the device is reduced, and the P-type performance of the device is improved. 本发明公开一种基于二维碲烯的场效应晶体管及其制备方法。所述基于二维碲烯的场效应晶体管包括：介电层、位于所述介电层上的二维碲烯层、位于所述二维碲烯层两端的铂层、位于两端铂层上的金层。本发明通过使用高功函的金属铂作为二维碲烯的接触金属，减小场效应晶体管的接触电阻，提高器件的性能。这是因为金属铂有着5.65eV的高功函，远远大于二维碲烯的价带顶(4.35eV左右)，能够在两者界面形成较小的肖特基势垒，促进二维碲烯中的空穴输运，从而减小器件的接触电阻，提高器件的P型性能。