Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11670
Title: Highly c-axis oriented CaRuO3 thin films on LaAlO3 buffered Si(100) substrates by pulsed laser deposition
Authors: Tian, HY
Wang, J
Wang, Y 
Qi, JQ
Wong, KH
Chan, HLW 
Choy, CL 
Issue Date: 2004
Publisher: Wiley-VCH
Source: Physica status solidi. A, Applied research, 2004, v. 201, no. 14, p. R101-R104 How to cite?
Journal: Physica status solidi. A, Applied research 
Abstract: Highly c-axis oriented CaRuO3 thin films were prepared on LaAlO3 buffered Si(100) substrates at 650°C by pulsed laser deposition. The buffer layer had a significant effect on the microstructure and electrical properties of the subsequent CaRuO3 thin films. Typical columnar grown CaRuO3 films were available using LaAlO3 as a buffer layer, although the buffer layer was not well-crystallized at the deposition temperature. The resistivity of the highly oriented CaRuO 3 thin film was 287.8 μΩ·cm at room temperature. The film showed typical metallic behaviour and its resistivity was sufficiently low to be used as a buffer layer in superconductor tapes or electrode materials in dielectrics devices.
URI: http://hdl.handle.net/10397/11670
ISSN: 0031-8965
EISSN: 1521-396X
DOI: 10.1002/pssa.200409068
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

2
Last Week
0
Last month
0
Citations as of Nov 9, 2017

WEB OF SCIENCETM
Citations

2
Last Week
0
Last month
0
Citations as of Nov 15, 2017

Page view(s)

46
Last Week
0
Last month
Checked on Nov 12, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.