Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11478
Title: High-resolution X-ray diffraction study of laser lift-off AlGaN/GaN HEMTs grown by MOCVD method
Authors: Leung, KK
Chan, CP
Fong, WK
Pilkuhn, M
Schweizer, H
Surya, C 
Keywords: A1. High-resolution X-ray diffraction
A3. Metal-organic chemical vapor deposition
B1. Gallium compounds
B1. Sapphire
B2. Semiconducting III-V materials
B3. High electron mobility transistors
Issue Date: 2007
Publisher: North-Holland
Source: Journal of crystal growth, 2007, v. 298, no. spec. iss, p. 840-842 How to cite?
Journal: Journal of crystal growth 
Abstract: High-resolution X-ray diffraction (HRXRD) study of laser debonded AlGaN/GaN high electron mobility transistors (HEMTs), grown by metal-organic chemical vapor deposition (MOCVD), is performed. The lattice parameters as well as the in-plane and out-of-plane strains of the transistors before and after laser lift-off are determined from θ-2θ X-ray diffraction spectra. The biaxial strains of the laser debonded HEMTs in a- and c-directions compared with the non-debonded HEMTs are extracted from the measured strain. The results clearly indicate stress relaxation in the device after laser debonding. Additionally, the full-width at half-maximum (FWHM) of the X-ray rocking curves are compared before and after laser debonding. The results do not indicate any increase in the dislocation densities in the heterojunction after laser debonding. This corroborates with the studies on the I-V characteristics of the devices, which also indicate no degradation in the electronic properties after laser debonding.
URI: http://hdl.handle.net/10397/11478
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.10.112
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