Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11162
Title: Possible mechanism for tunneling magnetoresistance in La 0.9Ba0.1MnO3/Nb-doped SrTiO3 p +-n junctions
Authors: Yuan, GL
Liu, JM
Baba-Kishi, K
Chan, HLW 
Choy, CL 
Liu, ZG
Keywords: Magnetically ordered materials
Spin dynamics
Tunnelling
Issue Date: 2004
Source: Solid state communications, 2004, v. 131, no. 6, p. 383-387 How to cite?
Journal: Solid State Communications 
Abstract: The observed tunneling magnetoresistance (TMR) effect in La 0.9Ba0.1MnO3 (LBMO)/Nb-doped SrTiO3 (Nb-STO) p+-n junctions is investigated and a possible mechanism responsible for the TMR generation is proposed by taking into account the dynamic spin accumulation and paramagnetic magnetization in the Nb-STO layer. Because of carrier diffusion across the dynamic domain boundaries in the Nb-STO layer and spin disordering in the LBMO layer, the tunneling resistance through the junction is high at zero magnetic field. The spin disordering is suppressed upon applying a non-zero magnetic field, which results in the spin-polarized tunneling in this ferromagnetic/depletion layer/dynamic ferromagnetic sandwiched structure and thus the observed TMR effect. The dependence of the TMR effect on the domain size in the LBMO layer, the tunneling current and temperature as well is explained, qualitatively consistent with the experimental observation.
URI: http://hdl.handle.net/10397/11162
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2004.05.040
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