Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11149
Title: Giant piezoelectric resistance in ferroelectric tunnel junctions
Authors: Zheng, Y
Woo, CH
Issue Date: 2009
Publisher: Institute of Physics Publishing
Source: Nanotechnology, 2009, v. 20, no. 7, 75401 How to cite?
Journal: Nanotechnology 
Abstract: The effect of an applied mechanical stress on the tunneling conductance of a ferroelectric tunnel barrier between substrates and dissimilar electrodes is studied. Using a thermodynamic model and taking into account polarization charge screening in the electrodes and the near-surface inhomogeneous polarization distribution, the tunneling conductance is calculated as a function of the applied stress. It is found that reversing an applied stress can also change the tunnel barrier sufficiently to produce an effect similar to the giant electro-resistance one due to polarization reversal, which is particularly significant near the stress-dependent paraelectric/ferroelectric phase transition. Indeed, the sensitivity is adequate for high-sensitivity electronic and mechanical sensors, memories and other nanodevices.
URI: http://hdl.handle.net/10397/11149
ISSN: 0957-4484
EISSN: 1361-6528
DOI: 10.1088/0957-4484/20/7/075401
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