Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11030
Title: Tunable dielectric behaviors of barium zirconate titanate thin films
Authors: Xu, WC
Wang, DY
Tang, XG
Wang, Y 
Chan, HLW 
Keywords: Barium zirconate titanate
Dielectric tunability
Microwave device
Thin film
Issue Date: 2006
Publisher: Taylor & Francis
Source: Integrated ferroelectrics, 2006, v. 80, no. 1, p. 443-449 How to cite?
Journal: Integrated ferroelectrics 
Abstract: The dielectric tunability of Ba(Zr x Ti 1-x )O 3 (x = 0.20, 0.25, 0.30 and 0.35, respectively) thin films epitaxially grown on MgO (001) single crystal substrates were investigated. The BZT thin films were deposited by means of pulsed laser ablation followed by annealing at 1100°C. X-ray diffraction revealed that the thin films were all well crystallized and epitaxially aligned on the substrate. The in-plane dielectric properties of the BZT thin films were characterized on a network analyzer. It is found that all the films have moderate dielectric constants and good tunability. Comparatively, however, Ba(Zr 0.30 Ti 0.70 )O 3 seems to be the most suitable candidate for making prototype microwave devices due to its largest tunability among all the samples. The typical in-plane dielectric properties of Ba(Zr 0.30 Ti 0.70 )O 3 thin film are: dielectric constant = 240 (at 10 MHz), tunability = 26% (at 1 GHz and under dc bias of 13 MV/m).
URI: http://hdl.handle.net/10397/11030
ISSN: 1058-4587
EISSN: 1607-8489
DOI: 10.1080/10584580600663300
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

1
Last Week
0
Last month
0
Citations as of Sep 9, 2017

WEB OF SCIENCETM
Citations

1
Last Week
0
Last month
0
Citations as of Sep 22, 2017

Page view(s)

29
Last Week
1
Last month
Checked on Sep 18, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.