Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/10894
Title: SiGe-Si junctions with boron-doped SiGe films deposited by co-sputtering
Authors: Jelenkovic, EV
Tong, KY
Cheung, WY
Wong, SP
Shi, BR
Pang, GKH
Keywords: Junction diode
Magnetron sputtering
SiGe
Issue Date: 2006
Publisher: Pergamon-Elsevier Science Ltd
Source: Solid-state electronics, 2006, v. 50, no. 2, p. 199-204 How to cite?
Journal: Solid-State Electronics 
Abstract: SiGe films were deposited and in situ doped by RF-magnetron co-sputtering on oxidized and bare silicon wafers. Post-deposition annealing was done in the temperature range from 580 to 950 °C. Structural and compositional characterization was performed by XRD, Raman, TEM and XPS analysis. Electrical properties were obtained by four-point probe measurements on SiGe films, and current-voltage measurements on SiGe(p +)-Si(n) diode structures. Excellent rectifying properties of SiGe-Si diodes were observed, and the conduction current mechanisms at different annealing temperatures were discussed.
URI: http://hdl.handle.net/10397/10894
ISSN: 0038-1101
DOI: 10.1016/j.sse.2005.12.013
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