Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/10720
Title: Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source
Authors: Fong, WK
Leung, KK
Surya, C 
Keywords: A1. Doping
A3. Metal-organic chemical vapor deposition
B1. Nitrides
Issue Date: 2007
Publisher: North-Holland
Source: Journal of crystal growth, 2007, v. 298, no. spec. iss, p. 239-242 How to cite?
Journal: Journal of crystal growth 
Abstract: Liquid Si ditertiarybutyl silane (DTBSi) metal-organic source was used as the Si dopant source for the growth of n-type GaN by metal-organic chemical vapor deposition (MOCVD) for the first time to replace the conventional gaseous Si sources like silane SiH 4 [K. Pakula, R. Bozek, J.M. Baranowski, J. Jasinski, Z. Liliental-Weber, J. Crystal Growth 267 (2004) 1] and disilane Si 2H 6 [L.B. Rowland, K. Doverspike, D.K. Gaskill, Appl. Phys. Lett. 66 (1995) 1495]. Electrical, structural, optical, and surface properties of the samples doped by DTBSi as well as an undoped control sample are determined by Hall, high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and atomic force microscopy (AFM) measurements respectively. A constant doping efficiency for GaN is obtained with carrier concentration up to 10 18 cm -3. The typical HRXRD full-width at half-maximum values of symmetric (0 0 2) and asymmetric (1 0 2) planes are 284 and 482 arcsec, respectively. The near band edge PL intensity is found to be increased proportional to the doping concentration. Dark spot density is also determined from AFM measurement.
URI: http://hdl.handle.net/10397/10720
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.10.024
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