Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/10687
Title: Enhanced memory effect in organic transistor by embedded silver nanoparticles
Authors: Wang, S
Leung, CW 
Chan, PKL
Keywords: Charge traps
Memory effect
Nanoparticle
Organic transistor
Issue Date: 2010
Publisher: Elsevier Science Bv
Source: Organic electronics : physics, materials, applications, 2010, v. 11, no. 6, p. 990-995 How to cite?
Journal: Organic electronics : physics, materials, applications 
Abstract: Organic memory devices based on silver nanoparticles (NPs) embedded into pentacene thin films are demonstrated. The memory effect is adjusted by varying the location of Ag NPs within the pentacene thin film, which is ascribed to the different trap densities. Maximum memory window of 90 V is obtained with the pentacene (15 nm)/Ag NPs (5 nm)/ pentacene (25 nm) configuration, which is three times larger than the conventional structure where the Ag NPs are directly deposited on the silicon dioxide. Hole trap mechanism dominates the hysteretic behavior and each nanoparticle contributes to around 20 traps states. These results show the potential application of such a structure in organic memory devices.
URI: http://hdl.handle.net/10397/10687
ISSN: 1566-1199
EISSN: 1878-5530
DOI: 10.1016/j.orgel.2010.03.020
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

45
Last Week
0
Last month
1
Citations as of Oct 7, 2017

WEB OF SCIENCETM
Citations

43
Last Week
0
Last month
1
Citations as of Oct 16, 2017

Page view(s)

43
Last Week
1
Last month
Checked on Oct 16, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.