Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/10472
Title: Studies of high DC current induced degradation in III-V nitride based heterojunctions
Authors: Ho, WY
Surya, C 
Tong, KY
Lu, LW
Ge, WK
Issue Date: 2000
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2000, v. 47, no. 7, p. 1421-1425 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: We report experiments on high dc current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electroluminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 10 13 cm -3 to 4.2 × 10 13 cm -3 at E 1 = E C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.
URI: http://hdl.handle.net/10397/10472
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/16.848286
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